产品概览

产品型号
STI11NM60ND
现有数量
0
制造商
STMicroelectronics
产品类别
晶体管 - FET,MOSFET - 单个
产品描述
MOSFET N-CH 600V 10A I2PAK

产品详情

Current - Continuous Drain (Id) @ 25°C :
10A (Tc)
Drain to Source Voltage (Vdss) :
600V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
850pF @ 50V
Mounting Type :
Through Hole
Operating Temperature :
150°C (TJ)
Package / Case :
TO-262-3 Long Leads, I²Pak, TO-262AA
Part Status :
Obsolete
Power Dissipation (Max) :
90W (Tc)
Rds On (Max) @ Id, Vgs :
450mOhm @ 5A, 10V
Supplier Device Package :
I2PAK
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±25V
Vgs(th) (Max) @ Id :
5V @ 250µA

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