产品概览

产品型号
IXCY01N90E
现有数量
0
制造商
IXYS
产品类别
晶体管 - FET,MOSFET - 单个
产品描述
MOSFET N-CH 900V 0.25A TO-252

产品详情

Current - Continuous Drain (Id) @ 25°C :
250mA (Tc)
Drain to Source Voltage (Vdss) :
900V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
7.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
133pF @ 25V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Part Status :
Obsolete
Power Dissipation (Max) :
40W (Tc)
Rds On (Max) @ Id, Vgs :
80Ohm @ 50mA, 10V
Supplier Device Package :
TO-252
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
5V @ 25µA
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