Current - Continuous Drain (Id) @ 25°C :

150mA (Ta)

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On, Min Rds On) :

1.5V, 4V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

1.58nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

7pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

4-UFDFN

Part Status :

Obsolete

Power Dissipation (Max) :

150mW (Ta)

Rds On (Max) @ Id, Vgs :

3.7Ohm @ 80mA, 4V

Supplier Device Package :

4-ECSP1008

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±10V

Vgs(th) (Max) @ Id :

-