Current - Continuous Drain (Id) @ 25°C :

16.1A (Tc)

Drain to Source Voltage (Vdss) :

40V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

3007pF @ 20V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-SOIC (0.154"", 3.90mm Width)

Part Status :

Active

Power Dissipation (Max) :

2.5W (Ta), 6.3W (Tc)

Rds On (Max) @ Id, Vgs :

15mOhm @ 10.2A, 10V

Supplier Device Package :

8-SO

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250µA