产品概览
产品详情
- Current - Continuous Drain (Id) @ 25°C :
- 35.4A (Tc)
- Drain to Source Voltage (Vdss) :
- 200V
- Drive Voltage (Max Rds On, Min Rds On) :
- 7.5V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1380pF @ 100V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- PowerPAK® SO-8
- Part Status :
- Active
- Power Dissipation (Max) :
- 104W (Tc)
- Rds On (Max) @ Id, Vgs :
- 31.9mOhm @ 10A, 10V
- Supplier Device Package :
- PowerPAK® SO-8
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
采购与价格
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- SIR616DP-T1-GE3 ¥10.5157
推荐产品
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- SIR616DP-T1-GE3 ¥10.5157