Current - Continuous Drain (Id) @ 25°C :

1.4A (Ta), 3.5A (Tc)

Drain to Source Voltage (Vdss) :

100V

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

15.2nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

544pF @ 50V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerVDFN

Part Status :

Active

Power Dissipation (Max) :

1.7W (Ta), 10.4W (Tc)

Rds On (Max) @ Id, Vgs :

400mOhm @ 1.4A, 10V

Supplier Device Package :

MLPAK33

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA