产品概览
- 产品型号
- SCT10N120AG
- 现有数量
- 550
- 产品描述
- SICFET N-CH 1200V 12A HIP247
产品详情
- Current - Continuous Drain (Id) @ 25°C :
- 12A (Tc)
- Drain to Source Voltage (Vdss) :
- 1200V
- Drive Voltage (Max Rds On, Min Rds On) :
- 20V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 290pF @ 400V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 200°C (TJ)
- Package / Case :
- TO-247-3
- Part Status :
- Active
- Power Dissipation (Max) :
- 150W (Tc)
- Rds On (Max) @ Id, Vgs :
- 690mOhm @ 6A, 20V
- Supplier Device Package :
- HiP247™
- Technology :
- SiCFET (Silicon Carbide)
- Vgs (Max) :
- +25V, -10V
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
采购与价格
您可能在找
- SCT1/0-1/0 ¥405.8643
- SCT1000N170 ¥54.0705
- SCT1008CMT3R2G ¥2.1628
- SCT10N120 ¥63.0201
- SCT10N120AG ¥71.8951
推荐产品
- SCT1/0-1/0 ¥405.8643
- SCT1000N170 ¥54.0705
- SCT1008CMT3R2G ¥2.1628
- SCT10N120 ¥63.0201
- SCT10N120AG ¥71.8951