Current - Continuous Drain (Id) @ 25°C :

6.5A (Ta)

Drain to Source Voltage (Vdss) :

60V

Drive Voltage (Max Rds On, Min Rds On) :

4V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Package / Case :

8-SOIC (0.154"", 3.90mm Width)

Part Status :

Active

Power Dissipation (Max) :

2W (Ta)

Rds On (Max) @ Id, Vgs :

37mOhm @ 6.5A, 10V

Supplier Device Package :

8-SOP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

20V

Vgs(th) (Max) @ Id :

2.5V @ 1mA