产品概览

产品型号
TPH3208PD
现有数量
101
制造商
Transphorm
产品类别
晶体管 - FET,MOSFET - 单个
产品描述
GANFET N-CH 650V 20A TO220AB

产品详情

Current - Continuous Drain (Id) @ 25°C :
20A (Tc)
Drain to Source Voltage (Vdss) :
650V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds :
760pF @ 400V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C
Package / Case :
TO-220-3
Part Status :
Obsolete
Power Dissipation (Max) :
96W (Tc)
Rds On (Max) @ Id, Vgs :
130mOhm @ 13A, 8V
Supplier Device Package :
TO-220AB
Technology :
GaNFET (Gallium Nitride)
Vgs (Max) :
±18V
Vgs(th) (Max) @ Id :
2.6V @ 300µA

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