Current - Continuous Drain (Id) @ 25°C :

15A (Tc)

Drain to Source Voltage (Vdss) :

650V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

7.1nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

576pF @ 400V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

3-PowerDFN

Part Status :

Obsolete

Power Dissipation (Max) :

69W (Tc)

Rds On (Max) @ Id, Vgs :

180mOhm @ 10A, 10V

Supplier Device Package :

3-PQFN (8x8)

Technology :

GaNFET (Gallium Nitride)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4.8V @ 500µA