产品概览

产品型号
TP65H035WSQA
现有数量
456
制造商
Transphorm
产品类别
晶体管 - FET,MOSFET - 单个
产品描述
GANFET N-CH 650V 47.2A TO247-3

产品详情

Current - Continuous Drain (Id) @ 25°C :
47.2A (Tc)
Drain to Source Voltage (Vdss) :
650V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1500pF @ 400V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-247-3
Part Status :
Active
Power Dissipation (Max) :
187W (Tc)
Rds On (Max) @ Id, Vgs :
41mOhm @ 32A, 10V
Supplier Device Package :
TO-247-3
Technology :
GaNFET (Cascode Gallium Nitride FET)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4.5V @ 1mA

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