产品概览

产品型号
TP90H050WS
现有数量
436
制造商
Transphorm
产品类别
晶体管 - FET,MOSFET - 单个
产品描述
900 V 34 A GAN FET

产品详情

Current - Continuous Drain (Id) @ 25°C :
34A (Tc)
Drain to Source Voltage (Vdss) :
900V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
17.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
980pF @ 600V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C
Package / Case :
TO-247-3
Part Status :
Active
Power Dissipation (Max) :
119W (Tc)
Rds On (Max) @ Id, Vgs :
63mOhm @ 22A, 10V
Supplier Device Package :
TO-247-3
Technology :
GaNFET (Cascode Gallium Nitride FET)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4.4V @ 700µA

采购与价格

您可能在找

推荐产品

在线客服
热线电话
0512-57509905/9906 ; 15921863525