产品概览

产品型号
TSM900N06CH X0G
现有数量
3,900
制造商
Taiwan Semiconductor Corporation
产品类别
晶体管 - FET,MOSFET - 单个
产品描述
MOSFET N-CHANNEL 60V 11A TO251

产品详情

Current - Continuous Drain (Id) @ 25°C :
11A (Tc)
Drain to Source Voltage (Vdss) :
60V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
9.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
500pF @ 15V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-251-3 Stub Leads, IPak
Part Status :
Active
Power Dissipation (Max) :
25W (Tc)
Rds On (Max) @ Id, Vgs :
90mOhm @ 6A, 10V
Supplier Device Package :
TO-251 (IPAK)
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2.5V @ 250µA

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