Current - Continuous Drain (Id) @ 25°C :

2.7A (Ta)

Drain to Source Voltage (Vdss) :

65V

Drive Voltage (Max Rds On, Min Rds On) :

5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

0.45nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

52pF @ 32.5V

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

Die

Part Status :

Active

Power Dissipation (Max) :

-

Rds On (Max) @ Id, Vgs :

130mOhm @ 500mA, 5V

Supplier Device Package :

Die

Technology :

GaNFET (Gallium Nitride)

Vgs (Max) :

+6V, -4V

Vgs(th) (Max) @ Id :

2.5V @ 250µA