Current - Continuous Drain (Id) @ 25°C :

118A (Tc)

Drain to Source Voltage (Vdss) :

650V

Drive Voltage (Max Rds On, Min Rds On) :

18V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

172nC @ 18V

Input Capacitance (Ciss) (Max) @ Vds :

2884pF @ 500V

Mounting Type :

Through Hole

Operating Temperature :

175°C (TJ)

Package / Case :

TO-247-3

Part Status :

Active

Power Dissipation (Max) :

427W

Rds On (Max) @ Id, Vgs :

22.1mOhm @ 47A, 18V

Supplier Device Package :

TO-247N

Technology :

SiCFET (Silicon Carbide)

Vgs (Max) :

+22V, -4V

Vgs(th) (Max) @ Id :

5.6V @ 23.5mA