Current - Continuous Drain (Id) @ 25°C :

395A (Tc)

Drain to Source Voltage (Vdss) :

1200V

FET Feature :

Silicon Carbide (SiC)

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

908nC @ 15V

Input Capacitance (Ciss) (Max) @ Vds :

2450pF @ 800V

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C ~ 175°C (TJ)

Package / Case :

Module

Part Status :

Active

Power - Max :

-

Rds On (Max) @ Id, Vgs :

5.3mOhm @ 400A, 15V

Supplier Device Package :

-

Vgs(th) (Max) @ Id :

3.6V @ 92mA