产品概览

产品型号
EMB10FHAT2R
现有数量
8,000
制造商
Rohm Semiconductor
产品类别
晶体管 - 双极(BJT)- 阵列 - 预偏置
产品描述
PNP+PNP DIGITAL TRANSISTOR (CORR

产品详情

Current - Collector (Ic) (Max) :
100mA
Current - Collector Cutoff (Max) :
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 10mA, 5V
Frequency - Transition :
250MHz
Mounting Type :
Surface Mount
Package / Case :
SOT-563, SOT-666
Part Status :
Active
Power - Max :
150mW
Resistor - Base (R1) :
2.2kOhms
Resistor - Emitter Base (R2) :
47kOhms
Supplier Device Package :
EMT6
Transistor Type :
2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max) :
50V

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